4v drive pch mosfet RP1E100RP ? structure ? dimensions (unit : mm) silicon p-channel mosfet ? features 1) low on-resistance. 2) high power package. 3) 4v drive. ? application switching ? packaging specifications ? inner circuit package taping code tr basic ordering unit (pieces) 1000 RP1E100RP ? ? absolute maximum ratings (ta = 25 ? c) symbol limits unit drain-source voltage v dss ? 30 v gate-source voltage v gss ? 20 v continuous i d ? 10 a pulsed i dp ? 40 a continuous i s ? 1.6 a pulsed i sp ? 40 a power dissipation p d 2.0 w channel temperature tch 150 ? c range of storage temperature tstg ? 55 to +15 0 ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 mounted on a ceramic board. ? thermal resistance symbol limits unit channel to ambient rth (ch-a) 62.5 ? c / w *mounted on a ceramic board. parameter type source current (body diode) drain current parameter * (1) source (2) source (3) gate (4) drain (5) drain (6) drain ? 1 esd protection diode ? 2 body diode *2 *1 *1 ?2 ?1 (5) (4) (2) ( 1) ( 3) (6) mpt6 (single) (1) (2) (3) (6) (5) (4) 1/5 2010.07 - rev.b www.rohm.com ?2010 rohm co., ltd. all rights reserved.
RP1E100RP ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss -- ? 10 ? av gs = ? 20v, v ds =0v drain-source breakdown voltage v (br)dss ? 30 - - v i d = ? 1ma, v gs =0v zero gate voltage drain current i dss -- ? 1 ? av ds = ? 30v, v gs =0v gate threshold voltage v gs (th) ? 1.0 - ? 2.5 v v ds = ? 10v, i d = ? 1ma - 9.0 12.6 i d = ? 10a, v gs = ? 10v - 12.5 17.5 i d = ? 5a, v gs = ? 4.5v - 14.0 19.6 i d = ? 5a, v gs = ? 4.0v forward transfer admittance l y fs l13 - - si d = ? 10a, v ds = ? 10v input capacitance c iss - 3600 - pf v ds = ? 10v output capacitance c oss - 450 - pf v gs =0v reverse transfer capacitance c rss - 450 - pf f=1mhz turn-on delay time t d(on) - 25 - ns i d = ? 5a, v dd ? 15v rise time t r - 60 - ns v gs = ? 10v turn-off delay time t d(off) - 150 - ns r l =3.0 ? fall time t f - 100 - ns r g =10 ? total gate charge q g - 39 - nc i d = ? 10a, v dd ? 15v gate-source charge q gs - 8.5 - nc v gs = ? 5v r l =1.5 ? gate-drain charge q gd - 13.5 - nc r g =10 ? *pulsed ? body diode characteristics (source-drain) (ta = 25 ?c) symbol min. typ. max. unit forward voltage v sd -- ? 1.2 v i s = ? 10a, v gs =0v *pulsed conditions conditions m ? parameter parameter static drain-source on-state resistance r ds (on) * * * * * * * * * * 2/5 2010.07 - rev.b data sheet www.rohm.com ?2010 rohm co., ltd. all rights reserved.
RP1E100RP ? electrical characteristic curves 0 2 4 6 8 10 12 14 16 18 20 0.0 0.2 0.4 0.6 0.8 1.0 ta=25 pulsed v gs = -3.2v v gs = -2.8v v gs = -10v v gs = -4.5v v gs = -4.0v 0.01 0.1 1 10 100 1.0 1.5 2.0 2.5 3.0 v ds =-10v pulsed ta=125 ta=75 ta=25 ta= -25 1 10 100 0.1 1 10 100 ta=25 pulsed v gs = -4.0v v gs = -4.5v v gs = -10v 0.01 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v gs =0v pulsed ta=125 ta=75 ta=25 ta= -25 0 2 4 6 8 10 12 14 16 18 20 0246810 v gs = ? 2.4v ta=25 pulsed v gs = -3.2v v gs = -2.8v 1 10 100 0.1 1 10 100 v gs = -4.5v pulsed ta=125 ta=75 ta=25 ta= -25 1 10 100 0.1 1 10 100 ta=125 ta=75 ta=25 ta= -25 v ds =-10v pulsed 0 1 10 100 0.1 1 10 100 v ds =-10v pulsed ta=125 ta=75 ta=25 ta= -25 1 10 100 0.1 1 10 100 v gs = -4.0v pulsed ta=125 ta=75 ta=25 ta= -25 fig.1 typical output characteristics() fig.2 typical output characteristics() fig.3 typical transfer characteristics fig.4 static drain-source on-state resistance vs. drain current( ) fig.5 static drain-source on-state resistance vs. drain current( ) fig.6 static drain-source on-state resistance vs. drain current( ) fig.7 static drain-source on-state resistance vs. drain fig.9 reverse drain current vs. sourse-drain voltage fig.8 forward transfer admittance vs. drain current drain current : ? i d [a] drain-source voltage : ? v ds [ v ] drain-source voltage : ? v ds [v] drain current : ? i d [a] drain c urrent : ?? i d [a] gate-source voltage : ? v gs [v] drain-current : -i d [a] static drain-source on-state resistance : r ds(on) [m ? ] drain-current : ? i d [a] static drain-source on-state resistance : r ds(on) [m ? ] drain-current : ? i d [a] static drain-source on-state resistance : r ds(on) [m ? ] drain-current : ? i d [a] static drain-source on-state resistance : r ds(on) [m ? ] forward transfer admittance : |yfs| [s] drain-current : ?? i d [a] reverse drain current : ? is [a] source-drain voltage : ?? v sd [v] v gs = -10v v gs = -4.5v v gs = -4.0v 3/5 2010.07 - rev.b data sheet www.rohm.com ?2010 rohm co., ltd. all rights reserved.
RP1E100RP 0 50 100 0 5 10 15 ta=25 pulsed i d = -5.0a i d = -10.0a 0 2 4 6 8 10 0 10203040506070 ta=25 v dd = -15v i d = -10a r g =10? pulsed 10 100 1000 10000 0.01 0.1 1 10 100 ciss coss crss ta=25 f=1mhz v gs =0v 0.01 0.1 1 10 100 1000 0.1 1 10 100 pw = 10ms ta = 25 single pulse mounted on a ceramic board dc operation operation in this area is limited by r ds (on) pw=100 ? s pw=1ms 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 100 1000 ta = 25 single pulse : 1unit rth ch-a t = t rthch-a rth ch-a = 62.5 /w 1 10 100 1000 10000 0.01 0.1 1 10 100 tr t f td(on) td(off) ta=25 v dd = -15v v gs = -10v r g =10? pulsed fig.10 static drain-source on-state resistance vs. gate source voltage fig.12 dynamic input characteristics fig.13 typical capacitance vs. drain-source voltage fig.11 switching characteristics fig.14 maximum safe operating aera fig.15 normalized transient thermal resistance vs. pulse width static drain-source on-state resistance : r ds(on) [m ? ] gate-source voltage : ?? v gs [v] switching time : t [ns] drain-current : ? i d [a] gate-source voltage : ? v gs [v] total gate charge : qg [nc] drain-source voltage : ? v ds [v] capacitance : c [pf] drain-source voltage : ? v ds [v] drain current : ? i d [a] pulse width : pw(s) normarized transient thermal resistance : r (t) 4/5 2010.07 - rev.b data sheet www.rohm.com ?2010 rohm co., ltd. all rights reserved.
RP1E100RP ? measurement circuits fig.1-1 switching time measurement circuit v gs r g v ds d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 90% 90% 10% 10% 10% 50% 50% pulse width v gs v ds t on t off t r t d(on) t f t d(off) fig.2-1 gate charge measurement circuit v gs i g(const.) r g v ds d.u.t. i d r l v dd fig.2-2 gate charge waveform v g v gs charge q g q gs q gd 5/5 2010.07 - rev.b data sheet www.rohm.com ?2010 rohm co., ltd. all rights reserved.
r1010 a www.rohm.com ? 2010 rohm co., ltd. all rights reserved. notice rohm customer support system http://www.rohm.com/contact/ thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact us. notes no copying or reproduction of this document, in part or in whole, is permitted without the consent of rohm co.,ltd. the content specified herein is subject to change for improvement without notice. the content specified herein is for the purpose of introducing rohm's products (hereinafter "products"). if you wish to use any such product, please be sure to refer to the specifications, which can be obtained from rohm upon request. examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the products. the peripheral conditions must be taken into account when designing circuits for mass production. great care was taken in ensuring the accuracy of the information specified in this document. however, should you incur any damage arising from any inaccuracy or misprint of such information, rohm shall bear no responsibility for such damage. the technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. rohm does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by rohm and other parties. rohm shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. the products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, commu- nication devices, electronic appliances and amusement devices). the products specified in this document are not designed to be radiation tolerant. while rohm always makes efforts to enhance the quality and reliability of its products, a product may fail or malfunction for a variety of reasons. please be sure to implement in your equipment using the products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any product, such as derating, redunda ncy, fire control and fail-safe designs. rohm shall bear no responsibility whatsoever for your use of any product outside of the prescribed scope or not in accordance with the instruction manual. the products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospac e machinery, nuclear-reactor controller, fuel- controller or other safety device). rohm shall bear no responsibility in any way for use of any of the products for the above special purposes. if a product is intended to be used for any such special purpose, please contact a rohm sales representative before purchasing. if you intend to export or ship overseas any product or technology specified herein that may be controlled under the foreign exchange and the foreign trade law, you will be required to obtain a license or permit under the law.
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